LOW POWER DESIGN

LOW POWER DESIGN STRATEGIES

1. What are the requirements to reduce the Power?
Challenges of Power
Significance of Power in CMOS
1 In earlier generations of IC design technologies, the main parameters of concern were timing and area. EDA tools were designed to maximize the speed while minimizing area. Power consumption was a lesser concern. CMOS was considered a low-power technology, with fairly low power consumption at the relatively low clock frequencies used at the time, and with negligible leakage current.
2 In recent years, however, device densities and clock frequencies have increased dramatically in CMOS devices, thereby increasing the power consumption dramatically. At the same time, supply voltages and transistor threshold voltages have been lowered, causing leakage current to become a significant problem. As a result, power consumption levels have reached their acceptable limits, and power has become as important as timing or area.
3 High power consumption can result in excessively high temperatures during operation. This means that expensive ceramic chip packaging must be used instead of plastic, and complex and expensive heat sinks and cooling systems are often required for product operation. Laptop computers and hand-held electronic devices can become uncomfortably hot to the touch. Higher operating temperatures also reduce reliability because of electromigration and other heat-related failure mechanisms.
4 High power consumption also reduces battery life in portable devices such as laptop computers, cell phones, and personal electronics. As more features are added to a product, power consumption increases and the battery life is reduced, requiring a larger, heavier battery or shorter life between charges. Battery technology has lagged behind the increased demands for power.
5 Another aspect of power consumption is the sheer cost of electrical energy used to power millions of computers, servers, and other electronic devices used on a large scale, both to run the devices themselves and to cool the machines and buildings in which they are used. Even a small reduction in power consumption of a microprocessor or other device used on a large scale can result in large aggregate cost savings to users and can provide significant benefits to the environment as well.

2. What are the types of power consumption in CMOS?
Designers must consider two types of power consumption, dynamic and static. Dynamic power is consumed during the switching of transistors, so it depends on the clock frequency and switching activity. Static power is the transistor leakage current that flows whenever power is applied to the device, so it is not related to the clock frequency or switching activity.

3. Explain Dynamic power consumption.
Dynamic power is the energy consumed during logic transitions on nets, consisting of two components, switching power and internal power. Switching power results from the charging and discharging of the external capacitive load on the output of a cell. Internal power results from the short-circuit (crowbar) current that flows through the PMOS-NMOS stack during a transition.The cause of switching power is illustrated in Figure 1-1. A transition from 0 to 1 on the output of the inverter charges the capacitive load of the output net through the PMOS transistor. A transition from 1 to 0 discharges the same capacitive load through the NMOS transistor.

The amount of energy dissipated in each transition depends on the supply voltage and the capacitive load of the net. Also, because the current flows only during logic transitions on the net, the long-term dynamic power consumption depends on the clock frequency (possible
transitions per second) and the switching activity (presence or absence of transitions actually occurring on the net in successive clock cycles).

Internal power is consumed during the short period of time when the input signal is at an intermediate voltage level, during which both the PMOS and NMOS transistors can be conducting. This condition results in a nearly short-circuit conductive path from VSS to ground, as illustrated in Figure 1-2. A relatively large current, called the crowbar current, flows through the transistors for a brief period of time. Lower threshold voltages and slower transitions result in more internal power consumption.

4. Explain Static power consumption.
Leakage current was negligible in earlier CMOS technologies. However, with shrinking device geometries and reduced threshold voltages, leakage power is becoming increasingly significant, sometime approaching the levels of dynamic power dissipation.
The main causes of leakage power are reverse-bias p-n junction diode leakage, subthreshold leakage, and gate leakage. These leakage paths in a CMOS inverter are shown in Figure 1-3.


Leakage at reverse-biased p-n junctions (diode leakage) has always existed in CMOS circuits. This is the leakage from the n-type drain of the NMOS transistor to the grounded ptype substrate, and from the n-well (held at VDD) to the p-type drain of the PMOS transistor. This leakage is relatively small.
Subthreshold leakage is the small source-to-drain current that flows even when the transistor is held in the “off” state. In older technologies, this current was negligible. However, with lower power supply voltages and lower threshold voltages, “off” gate voltages are getting close to “on” threshold voltages. Subthreshold leakage current increases exponentially as the gate voltage approaches the threshold voltage.
Gate leakage is the result of using an extremely thin insulating layer between the gate conductor and the MOS transistor channel. Gate oxides are becoming so thin that only a dozen or fewer layers of insulating atoms separate the gate from the source and drain. Under these conditions, quantum-effect tunneling of electrons through the gate oxide can occur, resulting in significant leakage from the gate to the source or drain.
Leakage currents occur whenever power is applied to the transistor, irrespective of the clock speed or switching activity. Leakage cannot be reduced by slowing or stopping the clock. However, it can be reduced or eliminated by lowering the supply voltage or by switching off the power to the transistors entirely.

5. What are the power reduction methods?
There are several different RTL and gate-level design strategies for reducing power. Some methods, such as clock gating, have been used widely and successfully for many years. Others, such as dynamic voltage and frequency scaling, have not been used much in the past due to the difficultly of implementing them. As power becomes increasingly important in advanced technologies, more methods are being exploited to achieve the design requirements.
a) Supply voltage reduction
b) Clock gating
c) Multiple-Vt Library cells
d) Multivoltage Design
e) Power Switching


6. Effect of supply voltage reduction
The most basic way to reduce power is to reduce the supply voltage. Power usage is proportional to the square of the supply voltage, as the simple example in Figure 1-4 demonstrates. A 50 percent reduction in the supply voltage results in a 50 percent reduction in current and a 75 percent reduction in power. A similar degree of power reduction can be achieved in CMOS circuits for both dynamic and static power.


Successive generations of CMOS technologies have used lower and lower supply voltages to reduce power. Starting at 5 volts for compatibility with bipolar TTL circuits in the 1980s, supply voltages have fallen to about 1 volt for advanced technologies. Each lowering of the supply voltage reduces per-gate power consumption, but also lowers the switching speed. In addition, the transistor threshold voltage must be lowered, causing more problems with noise immunity, crowbar currents, and subthreshold leakage. The lower voltage swing makes it more difficult to interface the chip with external devices that require larger voltage swings.

7. Explain Clock Gating
Clock gating is a dynamic power reduction method in which the clock signals are stopped for selected register banks during times when the stored logic values are not changing. One possible implementation of clock gating is shown in Figure 1-5.


Clock gating is particularly useful for registers that need to maintain the same logic values over many clock cycles. Shutting off the clocks eliminates unnecessary switching activity that would otherwise occur to reload the registers on each clock cycle. The main challenges of clock gating are finding the best places to use it and creating the logic to shut off and turn on the clock at the proper times.
Clock gating is a well-established power-saving technique that has been used for years. Synthesis tools such as Power Compiler can detect low-throughput datapaths where clock gating can be used with the greatest benefit, and can automatically insert clock-gating cells in the clock paths at the appropriate locations. Clock gating is relatively simple to implement because it only requires a change in the netlist. No additional power supplies or power infrastructure changes are required.(...more)

8. Impact on Multiple-Vt Library Cells in Power Consumption
Some CMOS technologies support the fabrication of transistors with different threshold voltages (Vt values). In that case, the cell library can offer two or more different cells to implement each logic function, each using a different transistor threshold voltage. For example, the library can offer two inverter cells: one using low-Vt transistors and another using high-Vt transistor.
A low-Vt cell has higher speed, but higher subthreshold leakage current. A high-Vt cell has low leakage current, but less speed. The synthesis tool can choose the appropriate type of cell to use based on the tradeoff between speed and power. For example, it can use low-Vt cells in the timing-critical paths for speed and high-Vt cells everywhere else for lower leakage power.

9. Explain MultiVoltage Design
Different parts of a chip might have different speed requirements. For example, the CPU and RAM blocks might need to be faster than a peripheral block. As mentioned earlier, a lower supply voltage reduces power consumption but also reduces speed. To get maximum speed and lower power at the same time, the CPU and RAM can operate with a higher supply voltage while the peripheral block operates with a lower voltage, as shown in Figure 1-6.

Providing two or more supply voltages on a single chip introduces some complexities and costs. Additional device pins must be available to supply the chip voltages, and the power grid must distribute each of the voltage supplies separately to the appropriate blocks. Where a logic signals leaves one power domain and enters another, if the voltages are significantly different, a level-shifter cell is necessary to generate a signal with the proper voltage swing. In the example shown in Figure 1-7, a level shifter converts a signal with 1.8- volt swing to a signal with a 1.0-volt swing. A level shifter cell itself requires two power supplies that match the input and output supply voltages.


10. Explain Power switching technique
Power switching is a power-saving technique in which portions of the chip are shut down completely during periods of inactivity. For example, in a cell phone chip, the block that performs voice processing can be shut down when the phone is in standby mode. When the user places a call or receives an outside call, the voice processing block must “wake up” from its powered-down state.
Power switching has the potential to reduce overall power consumption substantially because it lowers leakage power as well as switching power. It also introduces some additional challenges, including the need for a power controller, a power-switching network, isolation cells, and retention registers.
A power controller is a logic block that determines when to power down and power up a specific block. There is a certain amount of time and power cost for powering down and powering up a block, so the controller should determine the appropriate power-down times with a high degree of certainty.
A block that can be powered down must receive its power through a power-switching network, consisting of a larger number of transistors with source-to-drain connections between the always-on power supply rail and the power pins of the cells. The power switches are distributed physically around or within the block. The network, when switched on, connects the power to the logic gates in the block. When switched off, the power supply is effectively disconnected from the logic gates in the block.
High-Vt transistors from a Multiple-Threshold CMOS (MTCMOS) technology are used for the power switches because they minimize leakage and their switching speed is not critical. PMOS header switches can be placed between VDD and the block power supply pins, or NMOS footer switches can be placed between VSS and the block ground pins, as shown in Figure 1-8. The number, drive strength, and placement of switches should be chosen to give in an acceptable voltage drop during peak power usage in the block.



The switching strategy shown in Figure 1-8 is called a coarse-grain strategy because the power switching is applied to the whole block. Multiple transistors in parallel drive a common supply net for the block. In a fine-grain strategy, each library cell has its own power switch, allowing fine-grain control over which cells are powered down. The fine-grain approach has better potential for power savings, but requires significantly more area.
Any use of power switching requires isolation cells where signals leave a powered-down block and enter a block that is always on (or currently powered up). An isolation cell provides a known, constant logic value to an always-on block when the power-down block has no power, thereby preventing unknown or intermediate values that could cause crowbar currents.
One simple implementation of an isolation cell is shown in Figure1-9. When the block on the left is powered up, the signal P_UP is high and the output signal passes through the isolation cell unchanged (except for a gate delay). When the block on the left is powered down, P_UP is low, holding the signal constant at logic 0 going into the always-on block. Other types of isolation cells can hold a logic 1 rather than 0, or can hold the signal value latched at the time of the power-down event. Isolation cells must themselves have power during block power down periods.


The power switching can be combined with multivoltage operation. Different blocks can be designed to operate at different voltages and also to be separately powered down when they are not needed. In that case, the interface cells between different blocks must perform both level shifting and isolation functions, depending on whether the two blocks are operating at different voltages or one is shut down. A cell that performs both functions is called an enable level shifter. This cell must have two separate power supplies, just like any other level shifter.
When a block is powered down and then powered back up, it is often desirable for the block to be restored to the state it was in prior to the power-down event. There are several strategies for doing this. For example, the block register contents can be copied to RAM outside of the block before power-down, and then copied back after power-up.
Another strategy is to use retention registers in the power-down block. A retention register can retain data during power-down by saving the data into a shadow register prior to power down. Upon power-up, it restores the data from the shadow register to the main register. The shadow register has an always-on power supply, but it is constructed with high-Vt transistors to minimize leakage during the power-down period. The main register is built with fast but leaky low-Vt transistors.
One type of retention register implementation is shown in Figure 1-10. The SAVE signal saves the register data into the shadow register prior to power-down and the RESTORE signal restores the data after power-up. Instead of using separate, edge-sensitive SAVE and RESTORE signals, a retention register could use a single level-sensitive control signal.





11. Dynamic Voltage and Frequency Scaling
The principle of multivoltage operation can be extended to allow the voltage to be changed during operation of the chip to match the current workload. For example, a math processor chip in a laptop computer might operate at a lower voltage and lower clock frequency during simple spreadsheet computations, thereby saving power; and then at a higher voltage and higher clock frequency during 3-D image rendering when the highest performance is needed. The changing of supply voltage and operating frequency during operation to meet workload requirements is called dynamic voltage and frequency scaling.
The chip and voltage supply can be designed to use a number of established levels, or even a continuous range. Dynamic voltage scaling requires a multilevel power supply and a logic block to determine the best voltage level to use for a given task. Design, implementation, verification, and testing of the device can be especially challenging because of the ranges and combinations of voltage levels and operating frequencies that must be analyzed and accommodated.
Dynamic voltage scaling can be combined with power switching technology so that each block in the design can operate at multiple voltage levels for different performance requirements, or shut off completely when not needed at all.

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